SPM investigation of C thin films irradiated with energetic ions

Narumi, Kazumasa; Naramoto, Hiroshi

Proceedings of 3rd International Symposium on Atomic Level Characterizations for New Materials and Devices '01 (ALC '01), p.322 - 325, 2001/11

Transformation of C thin films on Si(111) substrates by irradiation with 360 keV Ar and Ar ions at fluences of 1.010/cm to 1.110/cm was investigated by atomic force microscopy. As-prepared insulating films become conductive after the irradiation up to the fluence of 1.110/cm, where the film is found to be almost transformed into a form of amorphous carbon by Raman-spectroscopy analysis. This results from conductive carbon species due to decomposition of the C molecule. Considerable topographic change is observed up to the fluence of 1.110/cm where the lines characteristic of the C film fade out of the Raman spectra, which is due to sputtering and to densification of the C molecule.